document number: 94335 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 23-apr-08 1 input rectifier diode to-220 full-pak, 10 a 10ets..fppbf high voltage series vishay high power products description the 10ets12fppbf rectifier series has been optimized for very low forward voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 150 c junction temperature. typical applications are in input rectification and these products are designed to be used with vishay hpp switches and output rectifiers which are available in identical package outlines. fully isolated package (v ins = 2500 v rms ) is ul e78996 approved this product has been designed and qualified for industrial level and lead (pb)-free (?pbf? suffix). product summary v f at 10 a < 1.1 v i fsm 200 a v rrm 800/1200 v anode 1 3 c a thode to-220ac full-pak b as e c a thode available rohs* compliant output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c common heatsink of 1 c/w 12.0 16.0 a major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 10 a v rrm range 800/1200 v i fsm 200 a v f 10 a, t j = 25 c 1.1 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 10ETS08FPpbf 800 900 0.5 10ets12fppbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 105 c, 180 conduction half sine wave 10 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 170 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 130 a 2 s 10 ms sine pulse, no voltage reapplied 145 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1450 a 2 s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94335 2 revision: 23-apr-08 10ets..fppbf high voltage series vishay high power products input rectifier diode to-220 full-pak, 10 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.1 v forward slope resistance r t t j = 150 c 20 m threshold voltage v f(to) 0.82 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.05 ma t j = 150 c 0.50 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 2.5 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220 full-pak (94/v0) 10ets12fp
document number: 94335 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 23-apr-08 3 10ets..fppbf high voltage series input rectifier diode to-220 full-pak, 10 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 80 100 90 150 140 130 120 110 maximum allowable case temperature (c) average forward current (a) 246810 12 0 30 60 90 180 10ets.. series r thjc (dc) = 2.5 c/w conduction angle ? 120 90 130 140 120 110 100 150 maximum allowable case temperature (c) average forward current (a) 4 268 16 18 10 12 14 0 dc 30 60 180 10ets.. series r thjc (dc) = 2.5 c/w ? conduction period 90 120 0 16 14 12 10 8 6 4 2 maximum average forward power loss (w) average forward current (a) 246 10 8 0 rms limit 10ets.. series t j = 150 c con duction an gle ? 180 120 90 60 30 0 8 6 4 2 20 18 16 14 12 10 2468 16 12 10 14 0 rms limit 10ets.. series t j = 150 c ? conduction period dc 180 120 90 60 30 maximum average forward power loss (w) average forward current (a) 40 100 80 60 200 180 160 140 120 10 100 1 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 10ets.. series at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 40 220 200 180 160 140 120 100 80 60 240 0.1 1.0 0.01 10ets.. series maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half sine wave forward current (a) pulse train duration (s)
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94335 4 revision: 23-apr-08 10ets..fppbf high voltage series vishay high power products input rectifier diode to-220 full-pak, 10 a fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 1 10 100 instantaneous forward current (a) instantaneous forward voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 0 10ets.. series t j = 25 c t j = 150 c 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 10 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) 10ets.. series single pulse
document number: 94335 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 23-apr-08 5 10ets..fppbf high voltage series input rectifier diode to-220 full-pak, 10 a vishay high power products ordering information table 1 - current rating (10 = 10 a) 2 - circuit configuration: 3 - package: 4 - type of silicon: 5 - voltage rating 6 - 7 - none = standard production pbf = lead (pb)-free e = single diode t = to-220ac s = standard recovery rectifier 08 = 800 v 12 = 1200 v full-pak device code 5 13 24 67 10 e t s 12 fp pbf links to related documents dimensions http://www.vishay.com/doc?95005 part marking information http://www.vishay.com/doc?95009
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
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